Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STMicroelectronics STWA68N65DM6AG

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Channel Type: N

Maximum Gate Threshold Voltage: 4.75V

Maximum Drain Source Resistance: 0.039 Ω

Package Type: TO-247

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 72 A

Transistor Material: Si

Pin Count: 3

FET Feature: –

HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Vgs(th) (Max) @ Id: 4.75V @ 250µA REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Qualification: AEC-Q101 standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 100 V Mounting Type: Through Hole Grade: Automotive Series: – Supplier Device Package: TO-247 Long Leads Packaging: Bulk Current – Continuous Drain (Id) @ 25°C: 72A (Tc) Power Dissipation (Max): 480W (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STWA68 ECCN: EAR99

This is Dual N-Channel MOSFET 72 A 650 V 3-Pin TO247-3 manufactured by STMicroelectronics. The manufacturer part number is STWA68N65DM6AG. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.039 ω maximum drain source resistance. The package is a sort of to-247. It consists of 2 elements per chip. While 72 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 39mohm @ 36a, 10v. The maximum gate charge and given voltages include 118 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. It has a long 16 weeks standard lead time. The product’s input capacitance at maximum includes 5900 pf @ 100 v. The product is automotive, a grade of class. to-247 long leads is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 72a (tc). The product carries maximum power dissipation 480w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stwa68, a base product number of the product. The product is designated with the ear99 code number.