Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin PG-TO263 Infineon IPB011N04LGATMA1

Maximum Drain Source Voltage: 40 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: OptiMOS™ 5

Channel Type: N

Maximum Gate Threshold Voltage: 2V

Maximum Drain Source Resistance: 0.0011 O

Package Type: TO-263-7

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 180 A

Pin Count: 7

This is Dual N-Channel MOSFET Transistor & Diode 180 A 40 V 7-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB011N04LGATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0011 o maximum drain source resistance. The package is a sort of to-263-7. It consists of 2 elements per chip. While 180 a of maximum continuous drain current. It contains 7 pins.