Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon IAUS240N08S5N019ATMA1

Maximum Drain Source Voltage: 80 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: OptiMOS™ 5

Channel Type: N

Maximum Gate Threshold Voltage: 3.8V

Maximum Drain Source Resistance: 0.0019 O

Package Type: PG HSOG-8 (TOLG)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 240 A

Pin Count: 8

This is Dual N-Channel MOSFET Transistor & Diode 240 A 80 V 8-Pin PG-HSOG manufactured by Infineon. The manufacturer part number is IAUS240N08S5N019ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0019 o maximum drain source resistance. The package is a sort of pg hsog-8 (tolg). It consists of 1 elements per chip. While 240 a of maximum continuous drain current. It contains 8 pins.