Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60E-T1-GE3

Maximum Drain Source Voltage: 650 V

Mounting Type: PCB Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: PowerPAK 10 x 12

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 24 A

Transistor Material: Silicon

Pin Count: 8

This is Dual Silicon N-Channel MOSFET 24 A 650 V 8-Pin PowerPAK 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK105N60E-T1-GE3. It has a maximum of 650 v drain source voltage. The product is available in pcb mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 10 x 12. It consists of 2 elements per chip. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.