Dimensions: 15.8 x 5 x 20.1mm
Maximum Continuous Drain Current: 69 A
Transistor Material: Si
Width: 5mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 250 V
Package Type: TO-3PN
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 3V
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 77 nC @ 10 V
Channel Type: N
Typical Input Capacitance @ Vds: 3570 pF @ 25 V Length: 15.8mm Pin Count: 3 Typical Turn-Off Delay Time: 130 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 480 W Series: UniFET Maximum Gate Source Voltage: ±30 V Height: 20.1mm Typical Turn-On Delay Time: 95 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 41 mΩ FET Feature: – HTSUS: 0000.00.0000 Vgs(th) (Max) @ Id: 5V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-3P-3, SC-65-3 Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Package: Bulk Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Power Dissipation (Max): 480W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V Mounting Type: Through Hole Series: UniFET™ Supplier Device Package: TO-3PN Current – Continuous Drain (Id) @ 25°C: 69A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: FDA69
This is Fairchild N-channel MOSFET 69 A 250 V UniFET 3-Pin TO-3PN manufactured by Fairchild Semiconductor. The manufacturer part number is FDA69N25. The given dimensions of the product include 15.8 x 5 x 20.1mm. While 69 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 77 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3570 pf @ 25 v . Its accurate length is 15.8mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 130 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 480 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 20.1mm. In addition, it has a typical 95 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 41 mω maximum drain source resistance. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 100 nc @ 10 v. It has a maximum Rds On and voltage of 41mohm @ 34.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 480w (tc). The product’s input capacitance at maximum includes 4640 pf @ 25 v. The product unifet™, is a highly preferred choice for users. to-3pn is the supplier device package value. The continuous current drain at 25°C is 69a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fda69, a base product number of the product.
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