Infineon FF600R12IE4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount

Mounting Type: Chassis Mount

Maximum Power Dissipation: 3.35 kW

Maximum Collector Emitter Voltage: 1200 V

Number of Transistors: 2

Maximum Continuous Collector Current: 600 A

Maximum Gate Emitter Voltage: ±20V

Package Type: AG-PRIME2

Configuration: Dual

This is Dual IGBT 600 A 1200 V AG-PRIME2 Chassis Mount manufactured by Infineon. The manufacturer part number is FF600R12IE4BOSA1. The product is available in chassis mount configuration. Provides up to 3.35 kw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 600 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-prime2. The product is available in dual configuration.