Infineon IPA50R280CEXKSA2 N-channel MOSFET, 13 A, 550 V CoolMOS CE, 3-Pin TO-220

Maximum Continuous Drain Current: 13 A

Transistor Material: Si

Width: 4.9mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 550 V

Package Type: TO-220

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 32.6 nC @ 10 V

Channel Type: N

Length: 10.65mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 30.4 W Series: CoolMOS™ CE Maximum Gate Source Voltage: -30 V, +30 V Height: 16.15mm Minimum Operating Temperature: -40 °C Forward Diode Voltage: 0.85V Maximum Drain Source Resistance: 280 mΩ

This is N-channel MOSFET 13 A 550 V CoolMOS CE 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPA50R280CEXKSA2. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 30.4 w maximum power dissipation. The product coolmos™ ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.85v . It provides up to 280 mω maximum drain source resistance.