Infineon IPB017N06N3GATMA1 N-channel MOSFET, 180 A, 60 V OptiMOS 3, 7-Pin D2PAK

Maximum Continuous Drain Current: 180 A

Width: 9.45mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Maximum Gate Threshold Voltage: 4V

Package Type: D2PAK-7

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 206 nC @ 10 V

Channel Type: N

Length: 10.31mm

Pin Count: 7 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 250 W Series: OptiMOS™ 3 Maximum Gate Source Voltage: -20 V, +20 V Height: 4.57mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 1.7 mΩ

This is N-channel MOSFET 180 A 60 V OptiMOS 3 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB017N06N3GATMA1. While 180 a of maximum continuous drain current. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak-7. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 206 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.7 mω maximum drain source resistance.