Infineon IPB60R165CP N-channel MOSFET, 21 A, 650 V CoolMOS CP, 3-Pin TO-263

Original price was: £2,04.Current price is: £0,61.

SKU: ET13824464 Category: Tag:

Category: Power MOSFET

Dimensions: 10.312 x 9.45 x 4.572mm

Maximum Continuous Drain Current: 21 A

Transistor Material: Si

Width: 9.45mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 3.5V

Package Type: TO-263

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 39 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 2000 pF @ 100 V Length: 10.31mm Pin Count: 3 Typical Turn-Off Delay Time: 50 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 192 W Series: CoolMOS CP Maximum Gate Source Voltage: ±30 V Height: 4.572mm Typical Turn-On Delay Time: 12 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 165 mΩ

This is N-channel MOSFET 21 A 650 V CoolMOS CP 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB60R165CP. It is of power mosfet category . The given dimensions of the product include 10.312 x 9.45 x 4.572mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2000 pf @ 100 v . Its accurate length is 10.31mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 50 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 192 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.572mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 165 mω maximum drain source resistance.

Reviews

There are no reviews yet.

Be the first to review “Infineon IPB60R165CP N-channel MOSFET, 21 A, 650 V CoolMOS CP, 3-Pin TO-263”

Your email address will not be published. Required fields are marked *