Infineon IRF7749L1TRPBF N-channel MOSFET, 375 A, 60 V DirectFET, HEXFET, 15-Pin DirectFET

Maximum Drain Source Voltage: 60 V

Typical Gate Charge @ Vgs: 200 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 125 W

Series: DirectFET, HEXFET

Maximum Gate Source Voltage: -20 V, +20 V

Height: 0.49mm

Width: 7.1mm

Length: 9.15mm

Package Type: DirectFET ISOMETRIC

Number of Elements per Chip: 1

Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 375 A Transistor Material: Si Forward Diode Voltage: 1.3V Channel Type: N Maximum Operating Temperature: +175 °C Maximum Drain Source Resistance: 1.5 mΩ Transistor Configuration: Single

This is N-channel MOSFET 375 A 60 V DirectFET HEXFET 15-Pin DirectFET manufactured by Infineon. The manufacturer part number is IRF7749L1TRPBF. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 200 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product directfet, hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.49mm. Furthermore, the product is 7.1mm wide. Its accurate length is 9.15mm. The package is a sort of directfet isometric. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 375 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.3v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It provides up to 1.5 mω maximum drain source resistance. The product offers single transistor configuration.