Infineon IRFB4228PBF N-channel MOSFET, 83 A, 150 V HEXFET, 3-Pin TO-220AB

Maximum Continuous Drain Current: 83 A

Transistor Material: Si

Transistor Configuration: Single

Maximum Drain Source Voltage: 150 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 72 nC @ 10 V

Channel Type: N

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 330 W Series: HEXFET Maximum Gate Source Voltage: -30 V, +30 V Height: 8.77mm Minimum Operating Temperature: -40 °C Maximum Drain Source Resistance: 15 mΩ

This is N-channel MOSFET 83 A 150 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB4228PBF. While 83 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 72 nc @ 10 v. The product is available in [Cannel Type] channel. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 330 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 8.77mm. Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 15 mω maximum drain source resistance.