Infineon IRFP1405PBF N-channel MOSFET, 160 A, 55 V HEXFET, 3-Pin TO-247

Maximum Continuous Drain Current: 160 A

Transistor Material: Si

Width: 19.71mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 55 V

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 120 nC @ 10 V

Channel Type: N

Length: 15.29mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 310 W Series: HEXFET Maximum Gate Source Voltage: -20 V, +20 V Height: 5.31mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 5.3 mΩ

This is N-channel MOSFET 160 A 55 V HEXFET 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IRFP1405PBF. While 160 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 19.71mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 120 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.29mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 310 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 5.31mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 5.3 mω maximum drain source resistance.