Infineon IRFS4010PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK

Category: Power MOSFET

Maximum Continuous Drain Current: 180 A

Transistor Material: Si

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: D2PAK

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 143 nC @ 10 V

Channel Type: N

Typical Input Capacitance @ Vds: 9575 pF@ 50 V Pin Count: 3 Typical Turn-Off Delay Time: 100 ns Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 375 W Series: HEXFET Maximum Gate Source Voltage: ±20 V Height: 4.83mm Typical Turn-On Delay Time: 21 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 5 mΩ

This is N-channel MOSFET 180 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS4010PBF. It is of power mosfet category . While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 143 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 9575 pf@ 50 v . It contains 3 pins. Whereas, its typical turn-off delay time is about 100 ns . The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 21 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.