N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB Vishay SIHP068N60EF-GE3

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: SiHP068N60EF

Channel Type: N

Maximum Gate Threshold Voltage: 5V

Maximum Drain Source Resistance: 0.068 Ω

Package Type: TO-220AB

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 41 A

Pin Count: 3

This is N-Channel MOSFET 41 A 600 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP068N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sihp068n60ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.068 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. While 41 a of maximum continuous drain current. It contains 3 pins.