Maximum Continuous Drain Current: 50 A, 136 A
Transistor Material: Si
Width: 6.22mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 60 V
Package Type: DPAK (TO-252)
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 2V
Maximum Operating Temperature: +150 °C
Typical Gate Charge @ Vgs: 65 nC @ 10 V
Channel Type: N
Length: 6.73mm
Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 127 W Series: PowerTrench Maximum Gate Source Voltage: -20 V, +20 V Height: 2.39mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 5.2 mΩ FET Feature: – Vgs(th) (Max) @ Id: 4V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V REACH Status: REACH Affected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Package: Bulk Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): Vendor Undefined Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 VMounting Type: Surface Mount Series: PowerTrench® Supplier Device Package: TO-252AA Current – Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Technology: MOSFET (Metal Oxide)
This is N-Channel MOSFET 50 A 136 A 60 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is FDD86540. While 50 a, 136 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 127 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5.2 mω maximum drain source resistance. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 4.1mohm @ 21.5a, 10v. The maximum gate charge and given voltages include 90 nc @ 10 v. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 3.1w (ta), 127w (tc). The product’s input capacitance at maximum includes 6340 pf @ 30 v. The product powertrench®, is a highly preferred choice for users. to-252aa is the supplier device package value. The continuous current drain at 25°C is 21.5a (ta), 50a (tc). This product use mosfet (metal oxide) technology.
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