Nch 600V 30A Power MOSFET

Maximum Drain Source Voltage: 600 V

Typical Gate Charge @ Vgs: 74 nC @ 15 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 370 W

Maximum Gate Source Voltage: ±30 V

Maximum Gate Threshold Voltage: 7V

Height: 21.25mm

Width: 5.22mm

Length: 16.24mm

Maximum Drain Source Resistance: 140 mΩ

Package Type: TO-247G

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 30 A Minimum Gate Threshold Voltage: 5V Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is Nch 600V 30A Power MOSFET manufactured by ROHM. The manufacturer part number is R6030JNZ4C13. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 74 nc @ 15 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 370 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 7v of maximum gate threshold voltage. In addition, the height is 21.25mm. Furthermore, the product is 5.22mm wide. Its accurate length is 16.24mm. It provides up to 140 mω maximum drain source resistance. The package is a sort of to-247g. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 5v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.