Maximum Drain Source Voltage: 650 V
Mounting Type: Through Hole
Channel Mode: Enhancement
Series: CoolMOS™ P7
Channel Type: N
Maximum Gate Threshold Voltage: 4V
Maximum Drain Source Resistance: 0.12 O
Package Type: TO-220 FP
Number of Elements per Chip: 1
Maximum Continuous Drain Current: 78 A
Pin Count: 3
This is Quad N-Channel MOSFET Transistor & Diode 78 A 650 V 3-Pin PG-TO 220 FullPAK manufactured by Infineon. The manufacturer part number is IPA60R120P7XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.12 o maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 78 a of maximum continuous drain current. It contains 3 pins.
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