Silicon carbide Power MOSFET 650 V, 55 m

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Channel Type: N

Maximum Gate Threshold Voltage: 5V

Maximum Drain Source Resistance: 0.067 Ω

Package Type: HiP247-4

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 45 A

Transistor Material: Silicon

Pin Count: 4

FET Feature: –

HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 200°C (TJ) Package / Case: TO-247-4 Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Vgs(th) (Max) @ Id: 5V @ 1mA REACH Status: REACH Unaffected edacadModel: SCTWA35N65G2V-4 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 18V, 20V edacadModelUrl: /en/models/18085222 Drain to Source Voltage (Vdss): 650 V Vgs (Max): +18V, -5V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 240W (Tc) standardLeadTime: 32 Weeks Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Mounting Type: Through Hole Series: – Supplier Device Package: TO-247-4 Packaging: Bulk Current – Continuous Drain (Id) @ 25°C: 45A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: SCTWA35 ECCN: EAR99

This is Silicon carbide Power MOSFET 650 V 55 m manufactured by STMicroelectronics. The manufacturer part number is SCTWA35N65G2V-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 ω maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 240w (tc). It has a long 32 weeks standard lead time. The product’s input capacitance at maximum includes 1370 pf @ 400 v. to-247-4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 45a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa35, a base product number of the product. The product is designated with the ear99 code number.