STMicroelectronics STW48N60M6-4

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Depletion

Series: ST

Channel Type: N

Maximum Gate Threshold Voltage: 4.75V

Maximum Drain Source Resistance: 0.061 Ω

Package Type: TO-247-4

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 39 A

Transistor Material: SiC

Pin Count: 4

FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-4 Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V title: STW48N60M6-4 Vgs(th) (Max) @ Id: 4.75V @ 250µA REACH Status: REACH Unaffected edacadModel: STW48N60M6-4 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/10414730 Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Power Dissipation (Max): 250W (Tc) standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V Mounting Type: Through Hole Series: MDmesh™ M6 Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Supplier Device Package: TO-247-4 Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 39A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STW48 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STW48N60M6-4. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product st, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.061 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 39 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 69mohm @ 19.5a, 10v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 250w (tc). It has a long 16 weeks standard lead time. The product’s input capacitance at maximum includes 2578 pf @ 100 v. The product mdmesh™ m6, is a highly preferred choice for users. The maximum gate charge and given voltages include 57 nc @ 10 v. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 39a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw48, a base product number of the product. The product is designated with the ear99 code number.