Toshiba TK100E08N1 N-channel MOSFET, 214 A, 80 V TK, 3-Pin TO-220

Maximum Drain Source Voltage: 80 V

Typical Gate Charge @ Vgs: 130 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 255 W

Series: TK

Maximum Gate Source Voltage: -20 V, +20 V

Maximum Gate Threshold Voltage: 4V

Height: 15.1mm

Width: 4.45mm

Length: 10.16mm

Maximum Drain Source Resistance: 3.2 mΩ

Package Type: TO-220 Number of Elements per Chip: 1 Maximum Continuous Drain Current: 214 A Transistor Material: Si Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 214 A 80 V TK 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK100E08N1. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 130 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 255 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15.1mm. Furthermore, the product is 4.45mm wide. Its accurate length is 10.16mm. It provides up to 3.2 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 214 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.