Maximum Drain Source Voltage: 1000 V
Typical Gate Charge @ Vgs: 190 nC @ 10 V
Mounting Type: Through Hole
Channel Mode: Enhancement
Maximum Power Dissipation: 190 W
Maximum Gate Source Voltage: -20 V, +20 V
Height: 20.7mm
Width: 5.31mm
Length: 15.87mm
Minimum Gate Threshold Voltage: 2V
Package Type: TO-247AC
Number of Elements per Chip: 1
Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 6.1 A Transistor Material: Si Maximum Drain Source Resistance: 2 Ω Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single
This is N-channel MOSFET 6.1 A 1000 V 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is IRFPG50PBF. It has a maximum of 1000 v drain source voltage. With a typical gate charge at Vgs includes 190 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 190 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.7mm. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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