Vishay SI4946BEY-T1-GE3 Dual N-channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC

Maximum Drain Source Voltage: 60 V

Typical Gate Charge @ Vgs: 17 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 3.7 W

Maximum Gate Source Voltage: -20 V, +20 V

Height: 1.55mm

Width: 4mm

Length: 5mm

Minimum Gate Threshold Voltage: 1V

Package Type: SOIC

Number of Elements per Chip: 2

Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 6.5 A Transistor Material: Si Maximum Drain Source Resistance: 52 mΩ Channel Type: N Maximum Operating Temperature: +175 °C Pin Count: 8 Transistor Configuration: Isolated

This is Dual N-channel MOSFET 6.5 A 60 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4946BEY-T1-GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.7 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.55mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 52 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration.