EF Series Power MOSFET With Fast Body Di

Maximum Continuous Drain Current: 19 A

Width: 9.65mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 4V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 48 nC @ 10 V

Channel Type: N

Length: 10.41mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 179 W Maximum Gate Source Voltage: ±30 V Height: 4.57mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 182 mΩ

This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHB22N60EF-GE3. While 19 a of maximum continuous drain current. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 182 mω maximum drain source resistance.