STMicroelectronics STW20NM60FD

Maximum Continuous Drain Current: 20 A

Transistor Material: Si

Width: 5.15mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 37 nC @ 10 V

Channel Type: N

Length: 15.75mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 214 W Series: FDmesh Maximum Gate Source Voltage: -30 V, +30 V Height: 20.15mm Minimum Operating Temperature: -65 °C Maximum Drain Source Resistance: 290 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -65°C ~ 150°C (TJ) Package / Case: TO-247-3 Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V title: STW20NM60FD Vgs(th) (Max) @ Id: 5V @ 250µA REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 214W (Tc) standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Mounting Type: Through Hole Series: FDmesh™ Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Supplier Device Package: TO-247-3 Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 20A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STW20 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STW20NM60FD. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product fdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.15mm. Whereas, the minimum operating temperature of the product is -65 °c. It provides up to 290 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 290mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 214w (tc). It has a long 16 weeks standard lead time. The product’s input capacitance at maximum includes 1300 pf @ 25 v. The product fdmesh™, is a highly preferred choice for users. The maximum gate charge and given voltages include 37 nc @ 10 v. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw20, a base product number of the product. The product is designated with the ear99 code number.