Maximum Drain Source Voltage: 200 V
Typical Gate Charge @ Vgs: 44 nC @ 10 V
Mounting Type: Surface Mount
Channel Mode: Enhancement
Maximum Power Dissipation: 3 W
Maximum Gate Source Voltage: -20 V, +20 V
Height: 4.83mm
Width: 9.65mm
Length: 10.41mm
Minimum Gate Threshold Voltage: 2V
Package Type: D2PAK (TO-263)
Number of Elements per Chip: 1
Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 11 A Transistor Material: Si Maximum Drain Source Resistance: 500 mΩ Channel Type: P Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single
This is P-channel MOSFET 11 A 200 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is IRF9640SPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 44 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.41mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 500 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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